p age:p2-p1 plastic-encapsulate transistors features complimentary to ss8550 marking : y1 maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5 v collector current -continuous i c 1500 ma collector power dissipation p c 300 mw junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v ceo i c = 0.1ma, i b =0 25 v emitter-base breakdown voltage v ebo i e =100 a, i c =0 5 v collector cut-off current i cb o v cb =40v, i e =0 0.1 a collector cut-off current i ceo v cb =20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe(1) v ce =1v, i c = 100ma 120 400 h fe(2) v ce =1v, i c = 800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b = 80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b = 80ma 1.2 v transition frequency f t v ce =10v, i c = 50ma f=30mhz 100 mhz classification of h fe rank l h j range 120-200 200-350 300-400 (npn) 1. base 2. emitter sot-23 3. collecto SS8050 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors typical characteristics 0 0 .4 0.8 1.2 1.6 2.0 0.1 0.2 0.3 0.4 0.5 i b = 3.0ma i b = 2 .5ma i b = 2.0ma i b = 1. 5ma i b = 1.0ma i b = 0. 5ma i c [a ], collector current v ce [ v ], collector-emitter voltage 0.1 1 1 0 100 1000 1 10 100 1000 v ce = 1 v h fe , dc cu rrent gain i c [ m a], collector current 0. 1 1 10 100 1000 10 100 1000 10000 i c = 1 0 i b v ce (sa t ) v be (s a t) v be (s a t), v ce ( s at)[mv], saturation voltage i c [m a ], collector current 0 . 00.20.40.60.81.01.2 0.1 1 10 100 v ce = 1 v i c [m a ], collector current v be [ v ], base-emitter voltage 11 0 1 0 0 1 10 100 1000 i e = 0 f = 1 mhz c ob [ p f], capacitance v cb [ v] , collector-base voltage 1 10 1 00 400 1 10 100 1000 v ce = 1 0 v f t [m hz ], current gain bandwidth product i c [ m a], collector current SS8050 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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